Recombination processes in Al2o3-InSb structures
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چکیده
2014 Metal-Insulator-InSb structures, for infrared imaging devices operating in the charge injection mode, have been developed. The sensitivity of devices is conditioned by the generationrecombination processes occurring in the semiconductor. Several methods have been used to study these generation-recombination processes. C(t) experiments in depletion and inversion regime, conductance measurements and photomagnetoelectric effects were performed on Al-Al2O3-n InSb MIS structures, in order to obtain data about recombination processes. These experimental results show a gradient in carriers lifetime which varies from 1 ns at the insulator-InSb interface to 100 ns inside the bulk of InSb. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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تاریخ انتشار 2016